SISS05DN-T1-GE3 The Vishay Dale SISS05DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage. It offers a continuous drain current of up to 108A and a low on-resistance.
Mfr Part #:

SISS05DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISS05DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage. It offers a continuous drain current of up to 108A and a low on-resistance.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.99

SISS05DN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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16,020 pcs
16020 pcs On Request 1 On Request On Request On Request On Request On Request

SISS05DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

SISS05DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiSS05DN is a TrenchFET Gen IV P-Channel power MOSFET designed for high power density applications. It features a 30V drain-source voltage and provides exceptionally low RDS(on) in a compact, thermally enhanced PowerPAK 1212-8S package.

 

Key electrical characteristics include a maximum continuous drain current of 108A (at Tc=25°C) and 29.4A (at Ta=25°C), with an Rds(on) as low as 0.0035 Ohms at 10A and 10V Vgs. The gate charge (Qg) is typically 37 nC. The MOSFET operates within a temperature range of -55°C to +150°C.

 

This component is suitable for applications such as battery management in mobile devices, adapter and charger switches, circuit protection, and load switching. It is available in a leadless PowerPAK 1212-8S surface mount package.

 

The SiSS05DN is lead (Pb)-free and halogen-free, meeting RoHS3 compliance. It is rated for Moisture Sensitivity Level 1.

SISS05DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiSS05DN P-Channel 30 V (D-S) MOSFET
Subcategory: P-Channel

SISS05DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SISS05DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISS05DN-T1-GE3 Features

  • P-Channel 30V (D-S) MOSFET
  • Low RDS(on) in compact package
  • High power density enabled
  • 108A continuous drain current
  • PowerPAK 1212-8S package

SISS05DN-T1-GE3 Applications

  • Battery management in mobile devices
  • Adapter and charger switch
  • Circuit protection
  • Load switch

SISS05DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SISS05DN-T1-GE3?

The maximum drain-source voltage (VDS) is 30 V.

What is the maximum continuous drain current of the SISS05DN-T1-GE3?

The maximum continuous drain current is 108 A at TC = 25 °C and 29.4 A at TA = 25 °C.

What is the maximum on-resistance (Rds On) for the SISS05DN-T1-GE3?

The maximum Rds On is 0.0035 Ohms at 10A and 10V Vgs.

What is the package type for the SISS05DN-T1-GE3?

The package type is PowerPAK® 1212-8S.

What is the operating temperature range for the SISS05DN-T1-GE3?

The operating junction and storage temperature range is -55°C to +150°C.

Is the SISS05DN-T1-GE3 RoHS compliant?

Yes, the SISS05DN-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SISS05DN-T1-GE3?

The Moisture Sensitivity Level is 1.

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