| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SISS04DN-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale, designed for high-current switching applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current rating of 80A at a case temperature of 25°C. The device also supports a maximum gate-source voltage of +16V and a minimum of -12V.
This MOSFET is suitable for power management and load switching in various electronic systems. The PPAK package offers a compact footprint for space-constrained designs. The device is rated for continuous drain current of 50.5A at an ambient temperature of 25°C and 40.3A at 70°C, providing flexibility for different thermal environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 80A at a case temperature of 25°C.
The gate-source voltage (Vgs) range is +16V maximum and -12V minimum.
The device is housed in a PPAK package.