| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SISH472DN-T1-GE3 is a single N-Channel Power MOSFET designed for high-performance applications. It offers a drain-source voltage (Vds) of 30V and a maximum on-resistance (Rds On) of 8.9mOhm when driven at 15A and 10V. The continuous drain current rating is 15A at ambient temperature and 20A at case temperature.
This MOSFET utilizes TrenchFET® technology and is optimized for synchronous buck operation. It features a gate-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The typical gate charge (Qg) is 9.8nC at 10V.
Packaged in the compact PowerPAK® 1212-8SH, this device is suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 3.5W at ambient temperature and 28W at case temperature, with a junction-to-ambient thermal resistance of 36°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V
PowerPAK 1212-8SH surface-mount package
-55°C to +150°C (junction)
2.5V at 250µA
12.4mOhm at 15A
15A at ambient temperature (25°C) and 20A at case temperature (25°C)
3.5W at ambient temperature (25°C) and 28W at case temperature (25°C)