SISH410DN-T1-GE3 The Vishay Dale SISH410DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage. It offers a low on-resistance of 4.8mOhm at 20A and 10Vgs.
Mfr Part #:

SISH410DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISH410DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage. It offers a low on-resistance of 4.8mOhm at 20A and 10Vgs.
✓ Total Stock: 3,918 pcs
$ Price Range: $0.99

SISH410DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,959 pcs
1959 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,959 pcs
1959 pcs On Request 1 On Request On Request On Request On Request On Request

SISH410DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISH410DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISH410DN-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 20V drain-source voltage and a maximum on-resistance of 4.8mOhm at 20A and 10Vgs. The continuous drain current is rated at 35A under Tc=25°C and 22A under Ta=25°C.

 

This MOSFET utilizes TrenchFET technology and is tested for 100% Rg and UIS. It is housed in a PowerPAK 1212-8SH surface mount package, suitable for DC/DC converters in notebook and POL applications. The operating temperature range is -55°C to +150°C.

 

Key electrical characteristics include a gate-source voltage of ±20V and a gate threshold voltage of 2.5V at 250µA. The input capacitance is 1600pF at 10V, and the gate charge is 41nC at 10V.

SISH410DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SISH410DN-T1-GE3 N-Channel 20V PowerPAK MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SISH410DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SISH410DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISH410DN-T1-GE3 Features

  • N-Channel 20V Power MOSFET
  • Low Rds On: 4.8mOhm at 20A, 10V
  • High continuous drain current: 35A (Tc)
  • PowerPAK 1212-8SH surface mount package
  • TrenchFET technology, 100% Rg and UIS tested

SISH410DN-T1-GE3 Applications

  • Suitable for DC/DC converters
  • Designed for notebook applications
  • Used in POL converters
  • Power management solutions

SISH410DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SISH410DN-T1-GE3?

The maximum drain-source voltage is 20 V.

What is the package type of this MOSFET?

The package is PowerPAK 1212-8SH, surface-mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the typical on-resistance?

The maximum on-resistance is 4.8 mOhm at 20A, 10V gate drive, and 6.3 mOhm at 4.5V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at 250µA drain current.

What is the continuous drain current rating?

The continuous drain current is 22A at 25°C ambient temperature and 35A at 25°C case temperature.

What is the input capacitance?

The input capacitance is 1600 pF at 10V drain-source voltage.

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