SISF00DN-T1-GE3 The Vishay Dale SISF00DN-T1-GE3 is a Common Drain Dual N-Channel MOSFET with a 30V drain-source voltage rating. It offers a continuous drain current of 60A and a low on-resistance of 5mOhm.
Mfr Part #:

SISF00DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISF00DN-T1-GE3 is a Common Drain Dual N-Channel MOSFET with a 30V drain-source voltage rating. It offers a continuous drain current of 60A and a low on-resistance of 5mOhm.
✓ Total Stock: 19,020 pcs
$ Price Range: $0.99

SISF00DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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19,020 pcs
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SISF00DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SISF00DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISF00DN-T1-GE3 is a Common Drain Dual N-Channel MOSFET designed for applications requiring efficient power handling. It features a 30V drain-source voltage and a continuous drain current capability of up to 60A at 25°C case temperature.

 

This MOSFET boasts a very low source-to-source on-resistance, with a maximum of 5mOhm at 10A and 10V Vgs. It also offers a typical gate charge of 16.1nC. The device is built using TrenchFET Gen IV power MOSFET technology and is housed in a compact, thermally enhanced PowerPAK® 1212-8SCD dual package.

 

Key electrical characteristics include an input capacitance of 2700pF at 15V and a gate threshold voltage of 2.1V at 250µA. The operating temperature range is from -55°C to 150°C.

 

Designed for applications such as battery management and load switching, this MOSFET optimizes circuit layout for bi-directional current flow. It is surface mounted and suitable for various power management tasks.

SISF00DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiSF00DN Common Drain Dual N-Channel 30 V MOSFET
Subcategory: Dual N-Channel

SISF00DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SISF00DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISF00DN-T1-GE3 Features

  • Common Drain Dual N-Channel MOSFET
  • 30V Drain-Source Voltage Rating
  • 60A Continuous Drain Current
  • 5mOhm Max Rds On
  • PowerPAK 1212-8SCD Package

SISF00DN-T1-GE3 Applications

  • Ideal for battery management systems
  • Suitable for load switching applications
  • Optimized for bi-directional current flow
  • Compact PowerPAK package

SISF00DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SISF00DN-T1-GE3?

The drain-source voltage for the SISF00DN-T1-GE3 is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the Rds On at 10A and 10V Vgs?

The Rds On is a maximum of 5mOhm at 10A and 10V Vgs.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is the SISF00DN-T1-GE3 in?

The SISF00DN-T1-GE3 is in a PowerPAK® 1212-8SCD Dual package.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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