| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Vishay Dale SISF00DN-T1-GE3 is a Common Drain Dual N-Channel MOSFET designed for applications requiring efficient power handling. It features a 30V drain-source voltage and a continuous drain current capability of up to 60A at 25°C case temperature.
This MOSFET boasts a very low source-to-source on-resistance, with a maximum of 5mOhm at 10A and 10V Vgs. It also offers a typical gate charge of 16.1nC. The device is built using TrenchFET Gen IV power MOSFET technology and is housed in a compact, thermally enhanced PowerPAK® 1212-8SCD dual package.
Key electrical characteristics include an input capacitance of 2700pF at 15V and a gate threshold voltage of 2.1V at 250µA. The operating temperature range is from -55°C to 150°C.
Designed for applications such as battery management and load switching, this MOSFET optimizes circuit layout for bi-directional current flow. It is surface mounted and suitable for various power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the SISF00DN-T1-GE3 is 30V.
The maximum continuous drain current is 60A at 25°C case temperature.
The Rds On is a maximum of 5mOhm at 10A and 10V Vgs.
The operating temperature range is -55°C to 150°C.
The SISF00DN-T1-GE3 is in a PowerPAK® 1212-8SCD Dual package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.