| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SISB46DN-T1-GE3 is a dual N-channel MOSFET designed for applications requiring efficient power switching. It offers a 40V drain-source voltage and a low on-resistance of 11.71mOhm at 10V Vgs, making it suitable for synchronous rectification and DC/DC converters.
This MOSFET utilizes TrenchFET® Gen IV technology, tuned for optimal RDS - Qoss FOM and featuring a Qgd / Qgs ratio less than 1 for improved switching characteristics. It is 100% Rg and UIS tested.
The component is packaged in a PowerPAK® 1212-8 Dual surface-mount package. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 23W at 25°C case temperature.
Key electrical parameters include an input capacitance of 1100pF and a gate charge of 11nC. The device is lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 40V.
The maximum continuous drain current is 34A at 25°C case temperature.
The Rds On (Max) is 11.71mOhm at 5A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
It is in a PowerPAK® 1212-8 Dual package.