| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SISA96DN-T1-GE3, is suitable for surface mount applications. It operates with a drain-to-source voltage of up to 30V and can handle a continuous drain current of 16A (Tc). The device offers a low on-resistance of 8.8mOhm at 10A and 10V, with a gate charge of 15nC at 4.5V.
The MOSFET is housed in a PowerPAK® 1212-8 package, facilitating efficient thermal management with a maximum power dissipation of 26.5W (Tc). It operates across a wide temperature range from -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 1385pF at 15V and a gate threshold voltage (Vgs(th)) of 2.2V at 250µA.
This component is classified under Transistors - FETs, MOSFETs - Single and is built using MOSFET (Metal Oxide) technology. Its specifications make it a viable option for various power switching and control applications where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
PowerPAK 1212-8 surface mount package.
-55°C to 150°C (junction).
16A at case temperature.
8.8mOhm maximum at 10V gate voltage and 10A drain current.
2.2V maximum at 250µA drain current.