| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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This Vishay Dale SISA40DN-T1-GE3 is a TrenchFET Gen IV power MOSFET designed for applications requiring efficient power switching. It features a 20V drain-source voltage and a low on-resistance of 1.1mOhm at 10A and 10V Vgs, with further characterization at 4.5V and 2.5V.
The MOSFET offers a continuous drain current of up to 162A (Tc) and 43.7A (Ta), with a maximum power dissipation of 52W (Tc) and 3.7W (Ta). It operates within a temperature range of -55°C to 150°C.
Key electrical parameters include an input capacitance of 3415 pF and a gate charge of 53 nC. The device is packaged in a surface-mount PowerPAK 1212-8 configuration, suitable for compact designs.
Applications include synchronous rectification, synchronous buck converters, battery management, and load switching. The MOSFET is rated for 2.5V RDS(on) and optimized for reduced switching power loss.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.01 | $1.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
162A at Tc=25°C and 43.7A at Ta=25°C.
1.1mOhm at Vgs=10V, 1.45mOhm at Vgs=4.5V, and 4.2mOhm at Vgs=2.5V.
1.5V max at 250µA.
-55°C to 150°C (junction).
PowerPAK 1212-8 surface-mount package.
Maximum 53nC at Vgs=10V, typical 18.2nC.