SISA35DN-T1-GE3 The Vishay Dale SISA35DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage. It offers a maximum continuous drain current of 16A (Tc) and a low on-resistance of 19mOhm at 9A, 10V.
Mfr Part #:

SISA35DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISA35DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage. It offers a maximum continuous drain current of 16A (Tc) and a low on-resistance of 19mOhm at 9A, 10V.
✓ Total Stock: 22,021 pcs
$ Price Range: $0.99

SISA35DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,020 pcs
22020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1 pcs
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SISA35DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISA35DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISA35DN-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a 30V drain-source voltage and a maximum continuous drain current of 16A when measured at the case temperature.

 

Key electrical characteristics include a low on-resistance of 19mOhm at 9A and 10V, and a gate threshold voltage of 2.2V at 250µA. The device also has a typical gate charge of 42nC at 10V and an input capacitance of 1500pF at 15V.

 

This MOSFET is housed in a PowerPAK 1212-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is rated at 24W (Tc) or 3.2W (Ta).

 

Applications include adapter switches, load switches, and DC/DC converters, particularly in battery-operated, mobile, and wearable devices requiring high-speed switching and efficient power management.

SISA35DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiSA35DN-T1-GE3 P-Channel 30V PowerPAK 1212-8 MOSFET
Subcategory: Power MOSFET

SISA35DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SISA35DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISA35DN-T1-GE3 Features

  • P-Channel 30V MOSFET
  • Low 19mOhm Rds On at 9A, 10V
  • 16A continuous drain current
  • PowerPAK 1212-8 surface mount package
  • Suitable for mobile and wearable devices

SISA35DN-T1-GE3 Applications

  • Used as an adapter switch
  • Functions as a load switch
  • Suitable for DC/DC converters
  • Enables high-speed switching
  • Powers mobile and wearable devices

SISA35DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SISA35DN-T1-GE3?

The maximum drain-to-source voltage (Vdss) is -30V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is -16A at a case temperature of 25°C and -10A at an ambient temperature of 25°C.

What is the on-resistance of the SISA35DN-T1-GE3?

The maximum on-resistance is 19mOhm at a gate-source voltage of 10V and a drain current of 9A.

What package type is the SISA35DN-T1-GE3 available in?

It is available in a surface-mount PowerPAK 1212-8 package.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

What is the maximum power dissipation of the SISA35DN-T1-GE3?

The maximum power dissipation is 24W at a case temperature of 25°C and 3.2W at an ambient temperature of 25°C.

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