| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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475 pcs
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475 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The SISA26DN-T1-GE3 is an N-Channel MOSFET designed for efficient power switching applications. It features a maximum drain-to-source voltage of 25 V and a continuous drain current rating of 60 A at a case temperature of 25 °C (29.1 A at ambient 25 °C). The device offers low on-resistance: typically 2.65 mOhm maximum at 15 A and 10 V gate drive, and 3.90 mOhm at 4.5 V, enabling high efficiency in low-voltage circuits.
The MOSFET has a gate charge of 44 nC maximum at 10 V and an input capacitance of 2247 pF at 10 V drain-source voltage, making it suitable for medium-speed switching in DC-DC converters and load switching. The device is able to withstand single-pulse avalanche currents up to 25 A with an energy rating of 31.2 mJ.
Housed in a PowerPAK 1212-8 surface-mount package, the device offers compact footprint and good thermal performance. Maximum power dissipation is 39 W at case temperature 25 °C, with a junction-to-case thermal resistance of 3.2 °C/W. The operating junction temperature range is -55 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
60 A at case temperature 25 °C, 60 A at 70 °C case, 29.1 A at ambient 25 °C, and 23.3 A at ambient 70 °C.
2.65 mOhm maximum at 15 A drain current and 10 V gate-source voltage; 3.90 mOhm maximum at 15 A and 4.5 V.
44 nC maximum at 10 V gate-source voltage.
2247 pF maximum at 10 V drain-source voltage.
-55 °C to 150 °C (junction).
PowerPAK 1212-8 (surface mount).