SISA24DN-T1-GE3 The Vishay Dale SISA24DN-T1-GE3 is an N-Channel MOSFET with a 25V drain-source voltage and 60A continuous drain current. It features a low on-resistance of 1.4mOhm at 15A, 10V.
Mfr Part #:

SISA24DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SISA24DN-T1-GE3 is an N-Channel MOSFET with a 25V drain-source voltage and 60A continuous drain current. It features a low on-resistance of 1.4mOhm at 15A, 10V.
✓ Total Stock: 13,998 pcs
$ Price Range: $0.99

SISA24DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,999 pcs
6999 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
6,999 pcs
6999 pcs On Request 1 On Request On Request On Request On Request On Request

SISA24DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SISA24DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SISA24DN-T1-GE3 is a TrenchFET® Gen IV power MOSFET designed for applications requiring high efficiency and low switching losses. It features an N-Channel configuration with a maximum drain-source voltage of 25V and a continuous drain current rating of 60A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with a maximum of 1.4mOhm at 15A and 10V Vgs. It also has optimized gate charge characteristics to reduce switching power loss. The device is tested 100% for Rg and UIS.

 

Packaged in a PowerPAK® 1212-8, this surface-mount component is suitable for high power density DC/DC converters, synchronous rectification, and load switching applications. The operating temperature range is -55°C to +150°C.

 

Key electrical parameters include a gate-source voltage range of +20V to -16V and a gate threshold voltage of 2.1V maximum. Input capacitance is rated at 2650 pF maximum at 10V.

SISA24DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 25 V (D-S) MOSFET
Subcategory: N-Channel

SISA24DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SISA24DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SISA24DN-T1-GE3 Features

  • TrenchFET Gen IV power MOSFET technology.
  • Optimized for reduced switching power loss.
  • 25V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 1.4mOhm on-resistance.

SISA24DN-T1-GE3 Applications

  • Used in synchronous rectification.
  • Suitable for high power density DC/DC.
  • Ideal for synchronous buck converters.
  • Applicable for load switching.

SISA24DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SISA24DN-T1-GE3?

The maximum drain-to-source voltage is 25 V.

What is the continuous drain current rating at 25 °C case temperature?

The continuous drain current is 60 A at TC = 25 °C.

What is the on-resistance at 10 V gate drive?

Maximum on-resistance is 1.4 mΩ at 15 A and 10 V.

What is the operating junction temperature range?

-55 °C to +150 °C.

What package is the SISA24DN-T1-GE3 offered in?

PowerPAK 1212-8 surface-mount package.

What is the maximum gate charge at Vgs = 4.5 V?

26 nC.

What is the maximum power dissipation at TC = 25 °C?

52 W.

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