| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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142 pcs
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142 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The SISA18ADN-T1-GE3 is an N-Channel power MOSFET from Vishay Dale, built on the TrenchFET Gen IV technology. It features a maximum drain-to-source voltage of 30V and a continuous drain current of 38.3A at 25°C case temperature. The device offers a low on-resistance of 7.5mΩ maximum at 10V gate drive, enabling efficient power switching.
This MOSFET is designed for surface mount assembly in the compact PowerPAK 1212-8 package. It supports gate-source voltages up to +20V and -16V, with a typical gate charge of 6.9nC for fast switching. The operating junction temperature range spans -55°C to 150°C.
Applications include DC-DC converters, load switches, and power management circuits where high efficiency and small footprint are required. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 38.3A at TC=25°C and 30.6A at TC=70°C.
The maximum on-resistance is 7.5mΩ at VGS=10V and 12.0mΩ at VGS=4.5V.
It is available in the PowerPAK 1212-8 surface mount package.
The operating junction and storage temperature range is -55°C to 150°C.