| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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67,020 pcs
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67020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SISA14DN-T1-GE3 is an N-Channel MOSFET designed for DC/DC conversion and synchronous rectification applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 20A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 5.1mOhm at 10A and 10V Vgs, and 8.5mOhm at 10A and 4.5V Vgs. The gate charge (Qg) is typically 9.4nC. The device operates over a temperature range of -55°C to 150°C.
This MOSFET is housed in a PowerPAK 1212-8 package, suitable for surface mounting. Its TrenchFET Gen IV technology ensures high performance and reliability for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
At case temperature 25°C it is 20 A; at ambient 25°C it is 19.7 A.
5.1 mOhm at Vgs=10V and 8.5 mOhm at Vgs=4.5V.
-55°C to 150°C.
PowerPAK 1212-8.
29 nC at Vgs=10V.
11.25 mJ.