| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,020 pcs
|
46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22,650 pcs
|
22650 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Style | |
| Mounting Type | |
| Number of Channels | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SISA12ADN-T1-GE3 is a TrenchFET Gen IV power MOSFET designed for various applications including switch mode power supplies, personal computers, servers, and telecom bricks. It offers a 30V drain-source voltage and a continuous drain current of 25A.
Key electrical characteristics include a maximum Rds On of 4.3mOhm at 10A and 10V, and a gate charge (Qg) of 45nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C.
This component is housed in a PowerPAK 1212-8 surface-mount package. It is tested 100% for Rg and UIS, ensuring high reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SISA12ADN-T1-GE3 is 30V.
The SISA12ADN-T1-GE3 has a maximum continuous drain current of 25A.
The Rds On for the SISA12ADN-T1-GE3 is a maximum of 4.3mOhm at 10A and 10V gate-source voltage.
The operating temperature range for the SISA12ADN-T1-GE3 is -55°C to 150°C.
The SISA12ADN-T1-GE3 is supplied in a PowerPAK 1212-8 package.