| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
163 pcs
|
163 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SISA10DN-T1-GE3 is an N-Channel MOSFET from Vishay Dale designed for power switching applications. It features a maximum drain-to-source voltage of 30 V and a continuous drain current of 30 A at case temperature 25°C. The device offers low on-resistance of 3.7 mOhm at 10V gate voltage, reducing conduction losses in high-efficiency circuits. The gate threshold voltage is 2.2V typical at 250µA, allowing logic-level drive compatibility.
Electrical characteristics include a typical gate charge of 15.4 nC and input capacitance of 2425 pF at 15V, enabling fast switching performance. The MOSFET can handle pulsed drain currents up to 80 A and single pulse avalanche energy of 20 mJ. Maximum power dissipation is 39 W at case temperature 25°C, derating to 3.6 W at ambient conditions.
The device is housed in a PPAK1212-8 surface-mount package, suitable for compact PCB layouts. Operating temperature range spans -55°C to 150°C. Typical applications include DC-DC converters, power management, load switching, and battery protection in consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
PPAK1212-8 (surface-mount).
-55°C to +150°C.
30 A.
3.7 mOhm maximum.
15.4 nC.
39 W.