| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,100 pcs
|
3100 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The Vishay SISA04DN-T1-GE3 is an N-Channel MOSFET from the TrenchFET Gen IV series. It is designed for applications requiring efficient power switching, with a maximum drain-source voltage of 30V and a continuous drain current of 40A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 2.15mOhm at 15A and 10V Vgs, and a maximum gate charge of 77nC at 10V Vgs. The MOSFET operates within a temperature range of -55°C to +150°C.
This component is housed in a PowerPAK 1212-8 package, suitable for surface mounting. The package offers good thermal performance with a junction-to-case thermal resistance of 2.4°C/W. Applications include switch mode power supplies, personal computers, servers, telecom bricks, and VRMs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
PowerPAK 1212-8.
-55°C to +150°C.
40A at case temperature 25°C.
2.15mΩ maximum at 15A, 10V gate drive.
77nC maximum at 10V gate-source.
3595pF maximum at 15V drain-source.