SIS892DN-T1-GE3 The Vishay Siliconix SiS892DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 30A. It is housed in a surface-mount PowerPAK 1212-8 package.
Mfr Part #:

SIS892DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SiS892DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and a continuous drain current of 30A. It is housed in a surface-mount PowerPAK 1212-8 package.
✓ Total Stock: 4,400 pcs
$ Price Range: $0.99

SIS892DN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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4,400 pcs
4400 pcs On Request 1 On Request On Request On Request On Request On Request

SIS892DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS892DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SiS892DN-T1-GE3 is an N-Channel Power MOSFET designed for applications requiring high performance and reliability. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 30A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 29mOhm at 10A and 10V Vgs, and 42mOhm at 10A and 4.5V Vgs, making it suitable for efficient power switching. The gate-source voltage (Vgs) range is ±20V, with a threshold voltage (Vgs(th)) of 3V at 250µA.

 

Packaged in a compact PowerPAK 1212-8 surface-mount configuration, the SiS892DN-T1-GE3 is designed for efficient thermal management. It operates within a junction temperature range of -55°C to 150°C. The device is also Halogen-free, compliant with IEC 61249-2-21 definition.

 

Key applications include DC/DC primary side switching and 48V telecom/server power supplies. It is 100% R g tested and 100% UIS tested, ensuring high quality and performance.

SIS892DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiS892DN N-Channel 100V MOSFET
Subcategory: N-Channel

SIS892DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS892DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS892DN-T1-GE3 Features

  • 100V drain-source breakdown voltage.
  • 30A continuous drain current.
  • Low on-resistance of 29mOhm.
  • Surface mount PowerPAK 1212-8 package.
  • Halogen-free compliance.

SIS892DN-T1-GE3 Applications

  • DC/DC primary side switch applications
  • 48V telecom and server converters
  • General DC/DC converter circuits
  • High-efficiency switching for telecom systems
  • Primary side MOSFET for isolated converters

SIS892DN-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

100 V minimum at VGS = 0 V and ID = 250 µA.

What is the continuous drain current rating?

30 A at Tc = 25°C and 27 A at Tc = 70°C.

What is the gate threshold voltage?

Maximum 3 V at ID = 250 µA.

What is the on-resistance?

29 mOhm max at VGS = 10 V, ID = 10 A; 42 mOhm max at VGS = 4.5 V, ID = 10 A.

What is the operating temperature range?

-55°C to 150°C junction and storage.

What package is available?

PowerPAK 1212-8 surface mount package.

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