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SIS890DN-T1-GE3 The Vishay Dale SIS890DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating. It is housed in a PowerPAK® 1212-8 package and offers a continuous drain current of 30A.
Mfr Part #:

SIS890DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS890DN-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage rating. It is housed in a PowerPAK® 1212-8 package and offers a continuous drain current of 30A.
✓ Total Stock: 2,043 pcs
$ Price Range: $0.99

SIS890DN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Rayichip ✓
Non-Authorised Inventory information
1,888 pcs
On Request
1888 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
130 pcs
On Request
130 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIS890DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SIS890DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS890DN is an N-Channel Power MOSFET designed for demanding applications. It features a 100V drain-source breakdown voltage and a maximum continuous drain current of 30A at 25°C case temperature. The MOSFET exhibits a low on-resistance, with a maximum of 23.5 mOhm at 10A and 10V gate-source voltage.

 

This device utilizes TrenchFET technology and is tested for 100% Rg and UIS. It is capable of operating with a 5V gate drive. The SiS890DN is packaged in the compact PowerPAK® 1212-8 surface-mount package, making it suitable for space-constrained designs.

 

Key applications include telecom bricks, primary side switching, and synchronous rectification in industrial systems. The operating temperature range is -55°C to 150°C.

SIS890DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 100V 30A PowerPAK® 1212-8 MOSFET
Subcategory: N-Channel

SIS890DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS890DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS890DN-T1-GE3 Features

  • N-Channel 100V Power MOSFET
  • Low Rds(on) of 23.5mOhm at 10A/10V
  • PowerPAK® 1212-8 surface mount package
  • Capable of 5V gate drive operation
  • 100% Rg and UIS tested

SIS890DN-T1-GE3 Applications

  • Ideal for telecom bricks
  • Used in primary side switching
  • Suitable for synchronous rectification
  • Designed for industrial applications

SIS890DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the package type?

PowerPAK 1212-8 surface mount.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum continuous drain current?

30A at Tc=25°C.

What is the typical on-resistance?

23.5mOhm at Vgs=10V.

What is the gate charge?

29nC maximum at Vgs=10V.

What is the maximum power dissipation?

52W at Tc=25°C.

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