SIS862ADN-T1-GE3 The Vishay SIS862ADN-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SIS862ADN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SIS862ADN-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 35,020 pcs
$ Price Range: $0.99

SIS862ADN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
27,000 pcs
27000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
7,020 pcs
7020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SIS862ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS862ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay SIS862ADN-T1-GE3 is an N-Channel MOSFET designed for various power applications. It features a drain-source breakdown voltage of 60V and a continuous drain current rating of up to 52A (Tc). The MOSFET utilizes TrenchFET Gen IV technology, offering a very low RDS x Qg figure-of-merit.

 

This component is suitable for applications such as synchronous rectification, DC/DC converters, and motor drive switches. It is packaged in the compact PowerPAK 1212-8 surface-mount package, measuring 3.3mm x 3.3mm. The operating temperature range is -55°C to 150°C.

 

The SIS862ADN-T1-GE3 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SIS862ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiS862ADN N-Channel 60 V Power MOSFET
Subcategory: N-Channel

SIS862ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS862ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS862ADN-T1-GE3 Features

  • N-Channel 60V Power MOSFET
  • Low RDS x Qg figure-of-merit
  • PowerPAK 1212-8 surface-mount package
  • Wide operating temperature range
  • RoHS3 compliant

SIS862ADN-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management in portable devices.
  • Suitable for motor control applications.
  • Applied in switching power supplies.
  • Used in load switching and battery protection.

SIS862ADN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V maximum.

What is the continuous drain current?

52A at case temperature, 15.8A at ambient.

What is the on-resistance?

7.2mOhm at 10V gate drive and 10A drain current.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the package type?

PowerPAK 1212-8 surface mount.

What is the gate threshold voltage?

2.5V maximum at 250µA.

What is the gate charge?

30nC at 10V.

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