SIS780DN-T1-GE3 The Vishay Dale SIS780DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 18A continuous current rating. It comes in a PowerPAK 1212-8 package.
Mfr Part #:

SIS780DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS780DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 18A continuous current rating. It comes in a PowerPAK 1212-8 package.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.99

SIS780DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request 19+ On Request On Request

SIS780DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS780DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIS780DN-T1-GE3 is an N-Channel MOSFET designed for various applications including notebook PCs, system power, memory, buck converters, and synchronous rectifier switches. It features a 30V drain-source voltage and a maximum continuous drain current of 18A at 25°C case temperature.

 

This MOSFET utilizes SkyFET monolithic TrenchFET Gen III technology, integrating a power MOSFET and a Schottky diode. It offers a low on-resistance of 13.5mOhm at 15A and 10Vgs. The device is packaged in a PowerPAK 1212-8 surface-mount package, measuring 3.3mm x 3.3mm.

 

Key electrical characteristics include a gate charge of 24.5 nC maximum at 10Vgs and an input capacitance of 722 pF maximum at 15Vds. The operating temperature range is -55°C to +150°C (TJ), with a maximum power dissipation of 27.7W at 25°C case temperature.

 

The SIS780DN-T1-GE3 is tested for Rg and UIS, ensuring reliability in demanding applications. It is suitable for designs requiring efficient power management and switching capabilities.

SIS780DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET® Gen III
Canonical Name: Vishay Dale SiS780DN-T1-GE3 N-Channel 30 V MOSFET with Schottky Diode
Subcategory: N-Channel

SIS780DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS780DN-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS780DN-T1-GE3 Features

  • N-Channel 30V MOSFET with Schottky diode.
  • Low Rds(on) of 13.5mOhm at 15A, 10Vgs.
  • 18A continuous drain current rating.
  • PowerPAK 1212-8 surface mount package.
  • Tested for Rg and UIS reliability.

SIS780DN-T1-GE3 Applications

  • Ideal for notebook PC system power.
  • Suitable for memory power applications.
  • Used in buck converter designs.
  • Effective as synchronous rectifier switches.

SIS780DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIS780DN-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 18A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 13.5mOhm at a gate-source voltage of 10V and drain current of 15A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SIS780DN-T1-GE3 available in?

It is available in a PowerPAK 1212-8 surface mount package.

Does this MOSFET have a Schottky diode?

Yes, it features a Schottky diode in the body.

What is the maximum power dissipation?

The maximum power dissipation is 27.7W at a case temperature of 25°C.

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