| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SIS626DN-T1-GE3 is an N-channel enhancement mode power MOSFET manufactured by Vishay Dale. This component is engineered for high-efficiency power switching and amplification tasks where low on-resistance and fast switching speeds are required. It features a robust 25V drain-source breakdown voltage rating alongside a 16A continuous drain current capability.
Designed for modern electronic systems, this MOSFET utilizes a PPAK1212-8 surface mount package. The compact footprint allows for high-density PCB layouts while maintaining effective thermal dissipation characteristics. Its construction supports reliable operation in various power management circuits, including DC-DC converters, motor control drivers, and load switch applications. Engineers can integrate this device into designs requiring compact form factors without compromising current handling or voltage tolerance. Procurement teams should verify specific thermal resistance values and gate charge parameters against official documentation before finalizing circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25 volts.
The continuous drain current rating is 16 amperes.
It uses a PPAK1212-8 surface mount package.
It is an N-channel enhancement mode MOSFET.