SIS478DN-T1-GE3 The Vishay Dale SIS478DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is designed for surface mount applications in a PowerPAK 1212-8 package.
Mfr Part #:

SIS478DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS478DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is designed for surface mount applications in a PowerPAK 1212-8 package.
✓ Total Stock: 120,983 pcs
$ Price Range: $0.99

SIS478DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
450 pcs
450 pcs On Request 1 On Request On Request 10+ On Request On Request

SIS478DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS478DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS478DN is an N-Channel TrenchFET Power MOSFET designed for various applications including notebook PC system power and load switching. It features a drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 12A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (RDS(on)) of 20mOhm at 8A and 10V VGS, and 30mOhm at 12A and 4.5V VGS. The gate charge (Qg) is typically 3.6 nC at 4.5V VGS. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 15.6W at 25°C case temperature.

 

The device is housed in a PowerPAK 1212-8 package, suitable for surface mounting. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The part is 100% Rg tested and 100% UIS tested.

SIS478DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiS478DN N-Channel 30V Power MOSFET

SIS478DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS478DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS478DN-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low on-resistance: 20mOhm at 8A, 10V.
  • Surface mount PowerPAK 1212-8 package.
  • RoHS3 compliant and halogen-free.
  • Tested for Rg and UIS.

SIS478DN-T1-GE3 Applications

  • Notebook PC system power.
  • Load switch applications.
  • Power management circuits.
  • General purpose switching.

SIS478DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIS478DN-T1-GE3?

The drain-source voltage (VDS) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 12A at 25°C case temperature.

What is the on-resistance of the SIS478DN-T1-GE3?

The on-resistance (RDS(on)) is a maximum of 20mOhm at 8A and 10V VGS.

What package type is the SIS478DN-T1-GE3 in?

It is in a PowerPAK 1212-8 package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SIS478DN-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SIS478DN-T1-GE3 halogen-free?

Yes, it is halogen-free.

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