SIS476DN-T1-GE3 The Vishay Dale SIS476DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SIS476DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS476DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 11,191 pcs
$ Price Range: $0.99

SIS476DN-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,338 pcs
5338 pcs On Request 1 On Request On Request 17+ On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,833 pcs
1833 pcs On Request 1 On Request On Request On Request On Request On Request

SIS476DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS476DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIS476DN-T1-GE3 is a high-performance N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 40A at 25°C case temperature.

 

This MOSFET offers a low on-resistance, with a maximum of 2.5 mOhm at 15A and 10V Vgs, and 3.5 mOhm at 15A and 4.5V Vgs. The typical gate charge is 22.5 nC at 10V Vgs. It operates within a junction temperature range of -55°C to +150°C.

 

The device utilizes TrenchFET Gen IV technology and is supplied in the compact PowerPAK 1212-8 surface-mount package. This package is suitable for applications requiring efficient power management and space savings.

 

Key applications include switch mode power supplies, personal computers and servers, telecom bricks, and VRMs and POL.

SIS476DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: Gen IV
Canonical Name: Vishay Dale SiS476DN N-Channel 30 V Power MOSFET
Subcategory: N-Channel

SIS476DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIS476DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS476DN-T1-GE3 Features

  • N-Channel 30V Power MOSFET
  • 40A Continuous Drain Current
  • Low On-Resistance: 2.5 mOhm Max.
  • PowerPAK 1212-8 Surface Mount Package
  • TrenchFET Gen IV Technology

SIS476DN-T1-GE3 Applications

  • Ideal for synchronous buck converter designs.
  • Used in automotive battery management systems.
  • Suitable for industrial motor control circuits.
  • Applied in high-efficiency DC-DC power supplies.
  • Employed in portable device charging solutions.

SIS476DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIS476DN-T1-GE3?

The maximum drain-source voltage is 30 V.

What is the continuous drain current of the SIS476DN-T1-GE3?

The continuous drain current is 40 A at 25°C case temperature.

What is the maximum on-resistance of the SIS476DN-T1-GE3?

The maximum on-resistance is 2.5 mOhm at 15A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIS476DN-T1-GE3 MOSFET supplied in?

The SIS476DN-T1-GE3 is supplied in the PowerPAK 1212-8 package.

Home
Account

Categories