| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiS472DN-T1-GE3 is an N-Channel Power MOSFET designed for high-side synchronous rectifier operation. It features a 30V drain-source breakdown voltage and a low on-resistance of 8.9mOhm at 15A and 10V Vgs.
This MOSFET is optimized for applications such as notebook CPU core power. It offers a continuous drain current of 20A at 25°C case temperature and a maximum power dissipation of 28W (Tc). The operating temperature range is -55°C to 150°C.
The device is packaged in a PowerPAK® 1212-8 surface-mount package. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. Testing includes 100% R g and 100% UIS tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V minimum.
20A at case temperature 25°C.
8.9mOhm maximum at VGS=10V, ID=15A.
-55°C to 150°C junction temperature.
PowerPAK 1212-8 surface mount.
Yes, it is halogen-free.
2.5V maximum at VGS=0V, ID=250µA.