SIS472ADN-T1-GE3 The Vishay Dale SIS472ADN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 24A continuous drain current. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SIS472ADN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS472ADN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 24A continuous drain current. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 56,939 pcs
$ Price Range: $0.99

SIS472ADN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
54,000 pcs
54000 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
2,939 pcs
2939 pcs On Request 1 On Request On Request On Request On Request On Request

SIS472ADN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS472ADN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS472ADN is an N-Channel Power MOSFET designed for high-side synchronous rectifier operation. It features a 30V drain-source voltage and a low on-resistance of 8.5 mOhm at 10A and 10V Vgs.

 

This MOSFET is optimized for applications such as notebook CPU core and high-side switching. It offers a continuous drain current of 24A at 25°C case temperature and a maximum power dissipation of 28W at 25°C case temperature. The device operates within a junction temperature range of -55°C to 150°C.

 

The SiS472ADN is packaged in a PowerPAK® 1212-8 surface-mount package. It is lead (Pb)-free and halogen-free, complying with RoHS3 standards. The component is suitable for various power management applications requiring efficient switching and low conduction losses.

SIS472ADN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiS472ADN N-Channel 30V Power MOSFET
Subcategory: N-Channel

SIS472ADN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIS472ADN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS472ADN-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low on-resistance of 8.5mOhm.
  • 24A continuous drain current.
  • PowerPAK 1212-8 surface mount package.
  • Lead (Pb)-free and halogen-free.

SIS472ADN-T1-GE3 Applications

  • Used in DC-DC converter power stages.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Designed for high efficiency synchronous rectification.

SIS472ADN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIS472ADN-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current for the SIS472ADN-T1-GE3?

The maximum continuous drain current is 24A at 25°C case temperature.

What is the typical on-resistance of the SIS472ADN-T1-GE3?

The on-resistance (Rds On) is a maximum of 8.5mOhm at 10A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIS472ADN-T1-GE3 MOSFET supplied in?

The MOSFET is supplied in a PowerPAK® 1212-8 package for surface mounting.

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