SIS468DN-T1-GE3 The Vishay Dale SIS468DN-T1-GE3 is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 30A. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SIS468DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS468DN-T1-GE3 is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 30A. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 2,580 pcs
$ Price Range: $0.99

SIS468DN-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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SIS468DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS468DN-T1-GE3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale, part number SIS468DN-T1-GE3, is designed for power switching applications. It features a maximum drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 30A at a case temperature of 25°C.

 

The MOSFET exhibits a low on-resistance (Rds On) of 19.5mOhm at a gate-source voltage (Vgs) of 10V. The gate charge (Qg) is typically 8.7nC. It operates with a gate drive voltage range of 4.5V to 10V and has a gate-source voltage (Vgs) limit of ±20V.

 

Packaged in a surface-mount PowerPAK 1212-8, this component is suitable for applications requiring efficient power management. The operating temperature range is -55°C to 150°C (TJ). Key electrical characteristics include an input capacitance (Ciss) of 780pF at 40V Vds and a gate threshold voltage (Vgs(th)) of 3V at 250µA.

 

This device is suitable for applications such as telecom bricks, primary side switching, and synchronous rectification. It is built using TrenchFET® power MOSFET technology and is 100% Rg and UIS tested.

SIS468DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiS468DN-T1-GE3 N-Channel 80V Power MOSFET

SIS468DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS468DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS468DN-T1-GE3 Features

  • N-Channel 80V Power MOSFET.
  • Low Rds(on) of 19.5mOhm at 10A/10V.
  • 30A continuous drain current capability.
  • Surface mount PowerPAK 1212-8 package.
  • TrenchFET technology for efficiency.

SIS468DN-T1-GE3 Applications

  • DC/DC converter power stages.
  • Power management and load switching.
  • High-efficiency synchronous rectification.
  • Battery protection and charging circuits.
  • Motor drive and actuator control.

SIS468DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIS468DN-T1-GE3?

The maximum drain-source voltage (Vds) is 80V.

What is the continuous drain current of the SIS468DN-T1-GE3?

The continuous drain current is 30A at a case temperature of 25°C.

What is the on-resistance (Rds On) of the SIS468DN-T1-GE3?

The Rds On is a maximum of 19.5mOhm at an Id of 10A and Vgs of 10V.

What package type is the SIS468DN-T1-GE3 MOSFET in?

The SIS468DN-T1-GE3 is in a PowerPAK 1212-8 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

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