SIS454DN-T1-GE3 The Vishay Dale SIS454DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 35A continuous current rating. It is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SIS454DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS454DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 35A continuous current rating. It is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 102,150 pcs
$ Price Range: $0.99

SIS454DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100,000 pcs
100000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,150 pcs
2150 pcs On Request 1 On Request On Request On Request On Request On Request

SIS454DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS454DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS454DN is an N-Channel TrenchFET Power MOSFET designed for DC/DC converter applications, including notebooks and POL systems. It features a drain-source voltage (Vds) of 20V and a maximum continuous drain current (Id) of 35A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 3.7mOhm at 20A and 10V Vgs. The gate charge (Qg) is typically 53nC at 10V Vgs. The device operates over a junction temperature range of -55°C to 150°C.

 

Packaged in a PowerPAK 1212-8, the SiS454DN is suitable for surface mounting. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The device is 100% R g and UIS tested.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA. The maximum power dissipation is 52W at 25°C case temperature and 3.8W at 25°C ambient temperature.

SIS454DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiS454DN N-Channel 20V Power MOSFET
Subcategory: N-Channel

SIS454DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS454DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS454DN-T1-GE3 Features

  • N-Channel 20V Power MOSFET.
  • Low on-resistance of 3.7mOhm.
  • High continuous drain current.
  • PowerPAK 1212-8 surface mount package.
  • Halogen-free and RoHS compliant.

SIS454DN-T1-GE3 Applications

  • DC/DC converter in notebook computers.
  • Point-of-load (POL) voltage regulation.
  • Low-voltage power switching applications.
  • High-efficiency synchronous buck converters.
  • Battery-powered portable device power management.

SIS454DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIS454DN-T1-GE3?

The drain-source voltage (Vds) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 35A.

What is the on-resistance of the SIS454DN-T1-GE3?

The on-resistance (Rds On) is a maximum of 3.7mOhm at 20A and 10V Vgs.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package type is the SIS454DN-T1-GE3 in?

It is in a PowerPAK 1212-8 package.

Is the SIS454DN-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL)?

The MSL is 1 Unlimited.

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