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SIS444DN-T1-GE3 The Vishay Dale SIS444DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 35A continuous current. It is housed in a surface-mount PowerPAK 1212-8 package.
Mfr Part #:

SIS444DN-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS444DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 35A continuous current. It is housed in a surface-mount PowerPAK 1212-8 package.
✓ Total Stock: 5,914 pcs
$ Price Range: $0.15

SIS444DN-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
5,914 pcs
On Request
5914 pcs On Request 1 On Request On Request 1321+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIS444DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SIS444DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIS444DN-T1-GE3 is a high-performance N-Channel MOSFET designed for various applications including motor control, industrial use, load switching, and OR-ing.

 

This MOSFET features a 30V drain-source voltage (Vds) and a maximum continuous drain current (Id) of 35A at 25°C case temperature. Its low on-resistance is specified as 3.3mOhm at 10A and 10V gate-source voltage (Vgs), and 4.3mOhm at 10A and 4.5V Vgs. The device has a maximum gate-source voltage of ±20V and a gate threshold voltage of 2.3V at 250µA.

 

With a maximum power dissipation of 52W at 25°C case temperature, the SIS444DN-T1-GE3 is suitable for demanding power applications. It operates within a junction temperature range of -55°C to +150°C. The component utilizes TrenchFET® technology and is 100% Rg and UIS tested.

 

The MOSFET is packaged in a PowerPAK® 1212-8, designed for surface mounting. It is lead (Pb)-free and halogen-free, with RoHS3 compliance.

SIS444DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30 V Power MOSFET
Subcategory: Single

SIS444DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIS444DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS444DN-T1-GE3 Features

  • N-Channel 30V Power MOSFET.
  • Low RdsOn: 3.3mOhm at 10A, 10V.
  • High continuous current: 35A.
  • Surface mount PowerPAK 1212-8 package.
  • Lead (Pb)-free and halogen-free.

SIS444DN-T1-GE3 Applications

  • Suitable for motor control.
  • Ideal for industrial applications.
  • Used for load switching.
  • Applicable for OR-ing circuits.

SIS444DN-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIS444DN-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 35A at 25°C case temperature.

What is the Rds On at Vgs = 10V?

The Rds On is a maximum of 3.3mOhm at 10A drain current and 10V gate-source voltage.

What is the package type for this MOSFET?

This MOSFET is supplied in the PowerPAK 1212-8 package.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

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