| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
45,200 pcs
|
45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Termination Style |
The Vishay Dale SiS443DN is a P-Channel MOSFET utilizing TrenchFET® power MOSFET technology. It is rated for a Drain-Source Voltage (VDS) of -40V and offers a low on-resistance (RDS(on)) of 0.0117 Ω at a Gate-Source Voltage (VGS) of -10V.
This MOSFET is suitable for applications such as adaptor switches, load switches, DC/DC converters, and general power management in notebook computers and mobile computing devices. It is tested 100% for Rg and UIS.
The component is housed in a PowerPAK® 1212-8 package, which is a leadless surface-mount type. It is also specified as Lead (Pb)-free and halogen-free.
Key electrical characteristics include a continuous drain current (ID) of -35A at TC = 25°C and a typical gate charge (Qg) of 41.5 nC. Thermal performance is supported by a maximum junction-to-case thermal resistance (RthJC) of 2.4 °C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40 V
0.0117 Ω
41.5 nC
PowerPAK® 1212-8
RoHS3 Compliant
1 Unlimited
-55 to +150 °C