| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiS436DN is an N-Channel Power MOSFET designed for DC/DC conversion applications. It features a 25V drain-source voltage and a low on-resistance of 10.5 mOhm at 10A and 10V Vgs.
This MOSFET offers a continuous drain current of 16A at 25°C case temperature and a maximum power dissipation of 27.7W (Tc). It operates within a junction temperature range of -55°C to 150°C.
The device is packaged in a compact PowerPAK 1212-8 surface-mount package, suitable for space-constrained designs. It is also specified as Halogen-free.
Key electrical characteristics include a gate-source voltage of ±20V and a gate charge of 6.7 nC typical at 10V Vgs. The MOSFET is built using TrenchFET Gen III technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25V.
The maximum gate-source voltage is ±20V.
The typical on-resistance is 10.5mOhm at 10A and 10V Vgs.
The continuous drain current is 16A at 25°C case temperature.
The operating temperature range is -55°C to 150°C.
This MOSFET is in a PowerPAK 1212-8 package.
Yes, this product is RoHS3 Compliant.