| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,020 pcs
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10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SiS435DNT is a P-Channel Power MOSFET designed for applications such as battery and load switching in smart phones, tablet PCs, and mobile computing devices. It features TrenchFET® Gen III technology and a thin profile with a maximum height of 0.8 mm.
Key electrical specifications include a 20V drain-source voltage and a low on-resistance of 5.4 mOhm at 13A and 4.5V Vgs. The continuous drain current is rated at 30A (Tc) and 22A (Ta). The gate charge is 180 nC at 8V Vgs, and the gate-source voltage is limited to ±8V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a PowerPAK® 1212-8 surface-mount package, suitable for compact designs. The device is also 100% R_g and UIS tested, ensuring reliability.
Applications include battery management, load switching, and general power management in portable electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20V.
The device is offered in a PowerPAK 1212-8 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The continuous drain current is 30A at case temperature 25°C and 22A at ambient temperature 25°C.
The maximum on-resistance is 5.4mOhm at Vgs=4.5V and Id=13A.
The maximum gate threshold voltage is 900mV at Id=250µA.
The maximum gate charge is 180nC at Vgs=8V.