SIS434DN-T1-GE3 The Vishay Dale SiS434DN-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 35A.
Mfr Part #:

SIS434DN-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SiS434DN-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a 40V drain-source voltage and a continuous drain current of 35A.
✓ Total Stock: 14,576 pcs
$ Price Range: $0.99

SIS434DN-T1-GE3 Available from 3 distributors

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470 pcs
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SIS434DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS434DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS434DN-T1-GE3 is a high-performance N-Channel Power MOSFET. It offers a 40V drain-source breakdown voltage and a continuous drain current capability of 35A at a case temperature of 25°C. The MOSFET exhibits a low on-resistance of 7.6mOhm at a gate-source voltage of 10V and a drain current of 16.2A.

 

This device is housed in a compact PowerPAK® 1212-8 surface mount package, making it suitable for space-constrained applications. It operates within a wide temperature range of -55°C to 150°C. The MOSFET is designed with TrenchFET® technology and is tested for R_g and UIS, ensuring reliability.

 

Key electrical characteristics include a gate-source threshold voltage of 2.2V maximum at 250µA, a gate charge of 40nC typical at 10V, and an input capacitance of 1530pF maximum at 20V. The maximum power dissipation is 52W at the case temperature of 25°C and 3.8W at an ambient temperature of 25°C.

 

The SiS434DN-T1-GE3 is compliant with RoHS 3 standards and is halogen-free, making it suitable for environmentally conscious designs. Its Moisture Sensitivity Level (MSL) is 1, indicating unlimited usability under standard conditions.

SIS434DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiS434DN N-Channel 40V Power MOSFET
Subcategory: Single

SIS434DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS434DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS434DN-T1-GE3 Features

  • N-Channel 40V Power MOSFET.
  • Low Rds On: 7.6mOhm at 10V Vgs.
  • High continuous drain current: 35A.
  • Compact PowerPAK 1212-8 package.
  • RoHS 3 compliant and halogen-free.

SIS434DN-T1-GE3 Applications

  • Suitable for power management.
  • Ideal for POL converters.
  • Used in high-efficiency circuits.
  • Compact design applications.

SIS434DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SiS434DN-T1-GE3?

The drain-source voltage rating is 40V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 35A at a case temperature of 25°C.

What is the Rds On (Max) for the SiS434DN-T1-GE3?

The Rds On is a maximum of 7.6mOhm when tested at a drain current of 16.2A and a gate-source voltage of 10V.

What package type is the SiS434DN-T1-GE3 MOSFET supplied in?

This MOSFET is supplied in a PowerPAK® 1212-8 package.

What is the operating temperature range for the SiS434DN-T1-GE3?

The operating junction temperature range is -55°C to 150°C.

Is the SiS434DN-T1-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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