| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
160 pcs
|
160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiS430DN is an N-Channel Power MOSFET from the TrenchFET series, rated for a 25V drain-to-source voltage. It features a low on-resistance of 5.1mOhm at 20A and 10V Vgs, making it suitable for efficient power switching.
This MOSFET is designed for applications such as DC/DC converters, including POL (Point-of-Load) and server power supplies. It is housed in a compact PowerPAK® 1212-8 surface mount package, facilitating high-density board designs.
The device operates within a temperature range of -55°C to 150°C and supports continuous drain currents up to 35A at 25°C case temperature. It also includes features like 100% R_g Tested and 100% UIS Tested, indicating robust performance and reliability.
Key electrical characteristics include a gate threshold voltage of 2.5V (max) at 250µA and input capacitance of 1600pF at 12.5V. The MOSFET is specified as Lead (Pb)-free and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating for the SIS430DN-T1-GE3 is 25V.
The continuous drain current is 35A at 25°C case temperature.
The maximum on-resistance is 5.1mOhm at 20A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The SIS430DN-T1-GE3 is supplied in a PowerPAK® 1212-8 surface mount package.
The SIS430DN-T1-GE3 is RoHS3 Compliant.
The Gate Charge (Qg) is 13 nC typical at VGS = 10 V and 35 nC typical at VGS = 4.5 V.