SIS426DN-T1-GE3 The Vishay Dale SIS426DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 35A continuous current rating. It is housed in a PowerPAK 1212-8 surface mount package.
Mfr Part #:

SIS426DN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS426DN-T1-GE3 is an N-Channel MOSFET with a 20V drain-source voltage and 35A continuous current rating. It is housed in a PowerPAK 1212-8 surface mount package.
✓ Total Stock: 78,858 pcs
$ Price Range: $0.99

SIS426DN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
78,609 pcs
78609 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
249 pcs
249 pcs On Request 1 On Request On Request 1102+ On Request On Request

SIS426DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS426DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS426DN is an N-Channel TrenchFET Power MOSFET designed for applications requiring high performance and efficiency. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 35A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 4.5mOhm at 10A and 10V Vgs, and a gate charge (Qg) of 42nC maximum at 10V Vgs. The device operates over a temperature range of -55°C to 150°C.

 

This MOSFET is packaged in the compact PowerPAK 1212-8 surface mount package, suitable for space-constrained designs. It is also noted as being Halogen-free and Lead (Pb)-free compliant.

 

Applications for this MOSFET include POL (Point-of-Load) and DC/DC conversion.

SIS426DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiS426DN N-Channel 20V MOSFET
Subcategory: N-Channel

SIS426DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIS426DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS426DN-T1-GE3 Features

  • N-Channel 20V Power MOSFET.
  • Low on-resistance of 4.5mOhm.
  • High continuous drain current of 35A.
  • Compact PowerPAK 1212-8 package.
  • Halogen-free and Lead-free compliant.

SIS426DN-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Applicable in battery protection circuits.

SIS426DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIS426DN-T1-GE3?

20V.

What package type is the SIS426DN-T1-GE3 available in?

PowerPAK 1212-8 surface-mount package.

What is the operating temperature range of this MOSFET?

-55°C to 150°C.

What is the typical on-resistance of the SIS426DN-T1-GE3?

4.5mOhm at Vgs=10V and 5.8mOhm at Vgs=4.5V.

What is the continuous drain current rating?

35A at case temperature 25°C and 22A at ambient temperature 25°C.

Is the device halogen-free?

Yes, per the datasheet.

Is the device lead-free?

Yes, per the datasheet.

Home
Account

Categories