| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150,667 pcs
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150667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SiS414DN-T1-GE3 is an N-Channel Trench FET® Power MOSFET designed for applications such as synchronous DC/DC converters and system power load switches for notebooks. It features a drain-source voltage of 30V and a continuous drain current of 20A at 25°C case temperature.
This MOSFET offers a low on-resistance of 16mOhm at 10A and 4.5V Vgs, with a typical on-resistance of 0.016 Ohm at 10A, 4.5V and 0.020 Ohm at 20A, 2.5V. The gate charge is typically 8.2 nC at 4.5V Vgs. The device operates over a temperature range of -55°C to 150°C (TJ).
The SiS414DN-T1-GE3 is packaged in the PowerPAK® 1212-8 surface mount package. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The device is 100% Rg tested and 100% UIS tested.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The maximum continuous drain current is 20A at 25°C case temperature.
The typical on-resistance is 0.016 Ohm at 10A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the SIS414DN-T1-GE3 is RoHS3 Compliant.
The package type is PowerPAK® 1212-8.