SIS413DN-T1-GE3 The Vishay Dale SiS413DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 18A continuous current rating. It features a low on-resistance of 9.4mOhm at 10V gate-source voltage.
Mfr Part #:

SIS413DN-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SiS413DN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 18A continuous current rating. It features a low on-resistance of 9.4mOhm at 10V gate-source voltage.
✓ Total Stock: 263,241 pcs
$ Price Range: $0.99

SIS413DN-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SIS413DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIS413DN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiS413DN-T1-GE3 is a P-Channel Power MOSFET designed for various power management applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 9.4mOhm when driven at 10V Vgs and 15A Id. The gate charge (Qg) is typically 35.4nC at 10V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ).

 

This MOSFET is housed in a PowerPAK® 1212-8 surface-mount package. It is suitable for applications such as adaptor switches, load switches, and power management in mobile computing.

 

The SiS413DN-T1-GE3 is manufactured using TrenchFET® technology and is 100% Rg and UIS tested. It is available in a lead (Pb)-free and halogen-free configuration.

SIS413DN-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiS413DN P-Channel 30V MOSFET
Subcategory: P-Channel

SIS413DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIS413DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS413DN-T1-GE3 Features

  • P-Channel 30V Power MOSFET
  • Low on-resistance of 9.4mOhm
  • 18A continuous drain current
  • PowerPAK 1212-8 surface mount package
  • TrenchFET technology for efficiency

SIS413DN-T1-GE3 Applications

  • Ideal for adaptor switch circuits
  • Suitable for load switch applications
  • Used in power management systems
  • Applicable for mobile computing devices

SIS413DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIS413DN-T1-GE3?

The maximum drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 18A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 9.4mOhm at Vgs=10V and Id=15A, and 13.2mOhm at Vgs=4.5V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SIS413DN-T1-GE3 available in?

It is available in a PowerPAK 1212-8 surface-mount package.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at a drain current of 250µA.

What is the maximum power dissipation?

The maximum power dissipation is 52W at a case temperature of 25°C and 3.7W at an ambient temperature of 25°C.

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