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SIS412DN-T1-GE3 The Vishay Dale SIS412DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating and a continuous current capability of 12A. It is designed for surface mount applications.
Mfr Part #:

SIS412DN-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIS412DN-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage rating and a continuous current capability of 12A. It is designed for surface mount applications.
✓ Total Stock: 66,003 pcs
$ Price Range: $0.99

SIS412DN-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
47,605 pcs
On Request
47605 pcs On Request 1 On Request On Request 09+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
11,600 pcs
On Request
11600 pcs On Request 1 On Request On Request 10+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
6,413 pcs
On Request
6413 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
349 pcs
On Request
349 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
36 pcs
On Request
36 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SIS412DN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SIS412DN-T1-GE3 Description

Short technical summary and product information.

The SIS412DN-T1-GE3 is an N-Channel MOSFET from Vishay Dale, rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 12A at Tc. It features a low on-resistance of 24mOhm at 7.8A and 10V gate drive, ensuring efficient power switching. The device is designed for surface mount assembly in a compact PowerPAK 1212-8 package. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 3.2W at ambient temperature and 15.6W at case temperature. The gate charge is 12nC at 10V, and input capacitance is 435pF at 15V, making it suitable for high-frequency switching applications.

SIS412DN-T1-GE3 Quick Information

Product Type: MOSFET
Series: PowerPAK 1212-8
Canonical Name: Vishay Dale SIS412DN-T1-GE3 N-Channel MOSFET
Subcategory: Single

SIS412DN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIS412DN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIS412DN-T1-GE3 Features

  • 30V maximum drain-to-source voltage rating.
  • 12A continuous drain current at Tc.
  • 24mOhm maximum on-resistance at 10V gate drive.
  • N-Channel MOSFET in PowerPAK 1212-8 package.
  • Operating junction temperature from -55°C to 150°C.

SIS412DN-T1-GE3 Applications

  • Suitable for DC/DC converter circuits.
  • Ideal for load switching in portable devices.
  • Used in power management for battery-powered systems.
  • Can be employed in low-voltage motor control.
  • Applicable for high-frequency switching regulators.

SIS412DN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIS412DN-T1-GE3?

30V.

What is the maximum continuous drain current?

12A at Tc.

What is the typical on-resistance?

24mOhm maximum at 7.8A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the SIS412DN-T1-GE3 available in?

PowerPAK 1212-8 surface mount package.

What is the gate threshold voltage?

2.5V maximum at 250µA drain current.

What is the gate charge of this MOSFET?

12nC maximum at 10V gate drive.

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