| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,492 pcs
|
31492 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,820 pcs
|
1820 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiS407DN-T1-GE3 is a P-Channel MOSFET designed for load and battery switch applications. It features a 20V drain-source voltage and a maximum continuous drain current of 25A at 25°C case temperature.
This MOSFET utilizes TrenchFET® technology and is housed in a low-profile PowerPAK® 1212-8 package, offering low thermal resistance and a small footprint. Key electrical characteristics include a low on-resistance of 0.0095 Ohms at VGS = -4.5V and a gate threshold voltage of 1V at 250µA.
The device operates over a temperature range of -55°C to 150°C. Its robust design is suitable for applications requiring efficient power switching and thermal management. The PowerPAK® 1212-8 package is surface-mountable, facilitating integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-25 A at Tc = 25°C
9.5 mOhm maximum
1 V maximum at 250 µA
-55°C to 150°C junction temperature
PowerPAK 1212-8 surface mount package
2760 pF at Vds = 10 V