| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
240 pcs
|
240 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIS407ADN-T1-GE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale rated for a maximum drain-source voltage of 20V and a continuous drain current of 18A at a case temperature of 25°C. It features a low typical on-resistance of 9mOhm at a gate-source voltage of 4.5V, with Rds(on) values of 12.2mOhm at 2.5V and 19mOhm at 1.8V. The maximum gate threshold voltage is 1V at 250µA drain current. The device has a maximum gate charge of 168nC at 8V and an input capacitance of 5875pF at 10V drain-source voltage. It is offered in the PowerPAK 1212-8 surface-mount package, suitable for automated assembly. This MOSFET is designed for power management applications where low on-resistance and low gate drive requirements are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 20 V.
The maximum continuous drain current is 18 A at a case temperature of 25°C.
The typical on-resistance (Rds(on)) is 9 mOhm at Vgs = 4.5V and Id = 15A.
The maximum gate threshold voltage (Vgs(th)) is 1 V at a drain current of 250 µA.
The maximum input capacitance (Ciss) is 5875 pF at Vds = 10V.
The maximum gate charge (Qg) is 168 nC at Vgs = 8V.
The maximum gate-source voltage (Vgs) is ±8 V.