| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIS334DN-T1-GE3 is an N-Channel enhancement-mode MOSFET from Vishay Dale. It is designed for high-efficiency power management applications. The device offers a maximum drain-to-source voltage of 30V and a continuous drain current of 20A at case temperature 25°C. On-resistance is typically 11.3mOhm maximum at 10V gate drive and 10A drain current. Gate threshold voltage is 2.4V maximum at 250µA. The MOSFET is driven with 4.5V or 10V gate logic. Total gate charge is 18nC at 10V. Input capacitance is 640pF at 15V drain-source voltage. Power dissipation is rated at 3.8W at ambient temperature 25°C and 50W at case temperature 25°C. The device operates over a junction temperature range of -55°C to 150°C. It is housed in a PowerPAK 1212-8 surface-mount package and supplied in tape and reel packaging. The part is halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
20A at case temperature 25°C.
11.3mOhm maximum at 10V gate drive and 10A drain current.
-55°C to 150°C.
PowerPAK 1212-8 surface-mount package.