| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,894 pcs
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21894 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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This Vishay SiS128LDN-T1-GE3 is an N-Channel MOSFET belonging to the TrenchFET Gen IV power MOSFET family. It offers a drain-source voltage of 80V and a maximum continuous drain current of 33.7A at 25°C case temperature.
The MOSFET has a low on-resistance, with a maximum of 15.6mOhm at 10A and 10V Vgs. It also features a typical gate charge of 9.5nC at 10V Vgs. The device is housed in a PowerPAK 1212-8 package, suitable for surface mounting.
Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 2.5V at 250µA. The device is rated for an operating temperature range of -55°C to 150°C.
Applications for this MOSFET include synchronous rectification, primary side switching, DC/DC converters, motor drive control, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80 V.
The maximum continuous drain current is 33.7 A at 25°C case temperature.
The maximum Rds On at Vgs = 10V is 15.6 mOhm.
The typical gate charge is 9.5 nC at Vgs = 10V.
The operating temperature range is -55°C to 150°C.
The device is in a PowerPAK 1212-8 package.