SIRC10DP-T1-GE3 The Vishay Dale SIRC10DP-T1-GE3 is an N-Channel MOSFET with a monolithic Schottky diode. It features a 30V drain-source voltage and a 60A continuous drain current.
Mfr Part #:

SIRC10DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIRC10DP-T1-GE3 is an N-Channel MOSFET with a monolithic Schottky diode. It features a 30V drain-source voltage and a 60A continuous drain current.
✓ Total Stock: 27 pcs
$ Price Range: $0.99

SIRC10DP-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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SIRC10DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIRC10DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIRC10DP-T1-GE3 is an N-Channel power MOSFET designed for synchronous buck and rectification applications. It integrates a TrenchFET Gen IV power MOSFET with a monolithic Schottky diode, offering robust performance.

 

Key electrical specifications include a 30V drain-source voltage (Vds) and a maximum continuous drain current of 60A at 25°C case temperature. The on-resistance (Rds(on)) is as low as 3.5mOhm at 10A and 10V gate-source voltage. The device also features a typical gate charge (Qg) of 11.2nC.

 

This MOSFET is housed in a PowerPAK SO-8 single package, designed for surface mounting. It operates within a junction temperature range of -55°C to +150°C. The component is rated for 100% Rg and UIS testing, ensuring reliability in demanding applications.

 

Applications include DC/DC conversion, synchronous rectification, and synchronous buck converters. The integrated Schottky diode aids in reducing voltage drops and improving efficiency.

SIRC10DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30 V MOSFET With Schottky Diode
Subcategory: N-Channel

SIRC10DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIRC10DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRC10DP-T1-GE3 Features

  • N-Channel 30V MOSFET with Schottky diode.
  • Low Rds(on) of 3.5mOhm at 10A, 10V.
  • High continuous drain current of 60A.
  • Surface mount PowerPAK SO-8 package.
  • TrenchFET Gen IV technology.

SIRC10DP-T1-GE3 Applications

  • Ideal for synchronous buck converters.
  • Suitable for synchronous rectification.
  • Used in DC/DC conversion circuits.
  • Designed for power management applications.

SIRC10DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIRC10DP-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the maximum continuous drain current for the SIRC10DP-T1-GE3?

The maximum continuous drain current is 60A at a case temperature of 25°C.

What is the Rds(on) of the SIRC10DP-T1-GE3?

The Rds(on) is a maximum of 3.5mOhm at 10A drain current and 10V gate-source voltage.

What is the package type for the SIRC10DP-T1-GE3?

The SIRC10DP-T1-GE3 is supplied in a PowerPAK SO-8 package for surface mounting.

What is the operating temperature range of the SIRC10DP-T1-GE3?

The operating junction and storage temperature range is -55°C to +150°C.

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