SIRB40DP-T1-GE3 The Vishay Dale SIRB40DP-T1-GE3 is a dual N-channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a 40A continuous drain current.
Mfr Part #:

SIRB40DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIRB40DP-T1-GE3 is a dual N-channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a 40A continuous drain current.
✓ Total Stock: 20,000 pcs
$ Price Range: $0.99

SIRB40DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request

SIRB40DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SIRB40DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIRB40DP-T1-GE3 is a dual N-channel MOSFET with a 40V drain-source voltage rating. It is designed using TrenchFET Gen IV technology, optimized for low RDS(on) and low Qoss FOM, with a Qgd/Qgs ratio less than 1 for improved switching characteristics. This MOSFET is 100% Rg and UIS tested.

 

Key electrical specifications include a maximum Rds(on) of 3.25 mOhm at 10A and 10V, and a gate charge of 45nC typical at 4.5V. The continuous drain current is rated at 40A at 25°C case temperature. It supports a maximum power dissipation of 46.2W at 25°C case temperature.

 

The device is housed in a PowerPAK SO-8 Dual package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. Applications include DC/DC converters, DC/AC inverters, synchronous rectification, and battery/load switching.

 

This MOSFET is lead (Pb)-free and halogen-free. It is rated for Moisture Sensitivity Level 1.

SIRB40DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 40 V MOSFET
Subcategory: N-Channel

SIRB40DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: lead (Pb)-free

SIRB40DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRB40DP-T1-GE3 Features

  • Dual N-Channel 40V Power MOSFET.
  • Low Rds(on) of 3.25mOhm at 10A, 10V.
  • High continuous drain current of 40A.
  • PowerPAK SO-8 Dual surface mount package.
  • Lead (Pb)-free and halogen-free.

SIRB40DP-T1-GE3 Applications

  • Used in DC/DC converters.
  • Suitable for DC/AC inverters.
  • Applied in synchronous rectification.
  • Functions as a battery load switch.

SIRB40DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIRB40DP-T1-GE3?

The maximum drain-source voltage is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 40A at 25°C case temperature.

What is the Rds(on) of the SIRB40DP-T1-GE3?

The Rds(on) is a maximum of 3.25 mOhm at 10A drain current and 10V gate-source voltage.

What is the package type for this MOSFET?

This MOSFET is supplied in a PowerPAK SO-8 Dual package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

Is the SIRB40DP-T1-GE3 RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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