| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57,000 pcs
|
57000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIRA80DP-T1-RE3 is a high-performance N-Channel MOSFET belonging to the TrenchFET Gen IV power MOSFET family. It offers a 30V drain-source voltage and a significant continuous drain current capability of up to 100A (Tc=25°C), making it suitable for demanding power applications.
Key electrical characteristics include a low on-resistance of 0.62mOhm at 10V Vgs and 4.5V Vgs, optimized gate charge (Qg) for reduced switching losses, and a maximum power dissipation of 104W (Tc=25°C). The device operates within a temperature range of -55°C to 150°C.
Packaged in a PowerPAK SO-8 surface-mount configuration, this MOSFET is designed for applications such as synchronous rectification, high power density DC/DC converters, synchronous buck converters, and load switching. Its optimized design contributes to reduced switching-related power loss.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
PowerPAK SO-8.
-55°C to 150°C.
335A.
0.62mOhm.
188nC maximum at 10V.
Rise time 23ns, fall time 12ns, turn-on delay 17ns, turn-off delay 41ns.