| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA62DP-T1-RE3 is an N-Channel MOSFET featuring TrenchFET Gen IV technology. It offers a 30V drain-source voltage and a continuous drain current of up to 80A at 25°C case temperature. The MOSFET exhibits low on-resistance, with a maximum of 1.2 mOhm at 15A and 10V gate-source voltage, and 1.85 mOhm at 15A and 4.5V gate-source voltage. Its typical gate charge is 28.7 nC at 10V.
This device is suitable for applications such as synchronous buck converters, high power density DC/DC converters, synchronous rectification, load switches, and OR-ing. It is housed in a PowerPAK SO-8 package, designed for surface mounting. The operating temperature range is -55°C to +150°C.
Key electrical characteristics include a maximum gate-source voltage of +16V / -12V and a gate threshold voltage of 2.2V at 250µA. The maximum power dissipation is rated at 65.7W at 25°C case temperature and 5.2W at 25°C ambient temperature. The thermal resistance from junction to ambient is a maximum of 24°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30 V.
The device is housed in a PowerPAK SO-8 surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
Maximum on-resistance is 1.2 mOhm at 15A, 10V gate drive, and 1.85 mOhm at 15A, 4.5V.
Continuous drain current is 80 A at case temperature 25°C, and 51.4 A at ambient temperature 25°C.
The maximum gate threshold voltage (Vgs(th)) is 2.2 V at 250 µA drain current.
The single pulse avalanche energy is 45 mJ, and the avalanche current is 30 A at 0.1 mH.