SIRA52ADP-T1-RE3 N-Channel 40V MOSFET from Vishay Dale. Supports 131A continuous drain current at TC=25°C and features low on-resistance of 1.63 mOhm.
Mfr Part #:

SIRA52ADP-T1-RE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
N-Channel 40V MOSFET from Vishay Dale. Supports 131A continuous drain current at TC=25°C and features low on-resistance of 1.63 mOhm.
✓ Total Stock: 16,764 pcs
$ Price Range: $0.99

SIRA52ADP-T1-RE3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,872 pcs
1872 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,872 pcs
1872 pcs On Request 1 On Request On Request On Request On Request On Request

SIRA52ADP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIRA52ADP-T1-RE3 Description

Short technical summary and product information.

The SIRA52ADP-T1-RE3 is an N-Channel MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power switching applications. The device is rated for a maximum drain-to-source voltage of 40V and can handle continuous drain currents up to 131A at case temperature 25°C (41.6A at ambient 25°C). Pulsed drain current capability reaches 200A.

 

Key electrical characteristics include a low maximum on-resistance of 1.63 mOhm at VGS=10V and 15A, and 2.3 mOhm at VGS=4.5V. The gate threshold voltage is 2.4V maximum at 250µA. The device features a typical gate charge of 32 nC and maximum input capacitance of 5500 pF at VDS=20V, enabling efficient switching.

 

The MOSFET is housed in a PowerPAK SO-8 package, which is surface mountable. It offers a maximum power dissipation of 48W at case temperature 25°C and 4.8W at ambient 25°C. The operating junction temperature range is -55°C to 150°C. Thermal resistance junction-to-case is 2.6°C/W and junction-to-ambient is 26°C/W (t≤10s).

 

This component is suitable for applications requiring high current handling and low conduction losses, such as DC-DC converters, motor drives, and power management circuits. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

SIRA52ADP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay SIRA52ADP-T1-RE3 N-Channel 40V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIRA52ADP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIRA52ADP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIRA52ADP-T1-RE3 Features

  • 40V drain-to-source voltage rating.
  • 131A continuous drain current at 25°C case.
  • Low on-resistance of 1.63 mOhm at 10V.
  • PowerPAK SO-8 surface mount package.
  • Operating temperature range -55°C to 150°C.

SIRA52ADP-T1-RE3 Applications

  • Used in high-efficiency DC-DC converters.
  • Ideal for motor drive and power management.
  • Suitable for load switching applications.
  • Applicable in battery protection circuits.

SIRA52ADP-T1-RE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIRA52ADP-T1-RE3?

40 V.

What package is the SIRA52ADP-T1-RE3 available in?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum continuous drain current?

131 A at case temperature 25°C, 41.6 A at ambient 25°C.

What is the on-resistance at 10V gate drive?

1.63 mOhm maximum at 15A, 10V.

What is the gate threshold voltage?

2.4 V maximum at 250 µA.

What is the typical gate charge?

32 nC.

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