| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
162 pcs
|
162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA32DP-T1-RE3 is an N-Channel MOSFET designed for high-performance applications. It offers a drain-source voltage (VDS) of 25V and a maximum continuous drain current (ID) of 185A at 25°C case temperature. The MOSFET exhibits a low on-resistance (RDS(on)) of 1.2mOhm at a gate-source voltage (VGS) of 10V, optimizing switching efficiency and reducing power loss.
This device utilizes TrenchFET Gen IV technology, featuring optimized gate charge characteristics to minimize switching-related power dissipation. It is rated for a wide operating temperature range from -55°C to +150°C. The SIRA32DP-T1-RE3 is housed in a surface-mount PowerPAK SO-8 package, suitable for high power density DC/DC converters and synchronous rectification applications.
Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.2V at 250µA, input capacitance (Ciss) of 4450pF at 10V, and gate charge (Qg) of 83nC at 10V. The maximum power dissipation is 65.7W at 25°C case temperature. The component is RoHS3 compliant and has an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25 V.
PowerPAK SO-8.
-55°C to +150°C.
1.2 mOhm maximum.
185 A.
2.2 V maximum at 250 µA.
65.7 W.