| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,803 pcs
|
1803 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
175 pcs
|
175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIRA28BDP-T1-GE3 is a 30V N-Channel MOSFET designed for high power density applications. It utilizes TrenchFET Gen IV technology, offering low on-resistance characteristics with a maximum of 7.5mOhm at 10A and 10V Vgs. The device supports a continuous drain current of up to 38A at 25°C case temperature and 18A at 25°C ambient temperature.
Key electrical parameters include a gate charge of 4.5 nC typical and an input capacitance of 582 pF maximum. The operating temperature range is from -55°C to 150°C (TJ). The MOSFET is housed in a PowerPAK SO-8 surface-mount package, suitable for applications requiring high power density and efficient synchronous rectification, such as DC/DC converters and VRMs.
This MOSFET is 100% Rg and UIS tested, ensuring reliability in demanding applications. It is designed for surface mounting and is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30 V.
The maximum continuous drain current is 38A at 25°C case temperature and 18A at 25°C ambient temperature.
The maximum on-resistance is 7.5mOhm at 10A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The component is in a PowerPAK SO-8 package.
This MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.