| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SiRA24DP is an N-Channel power MOSFET designed for applications requiring high efficiency and power density. It features TrenchFET Gen IV technology, optimized for reduced switching losses.
Key electrical specifications include a 25V drain-source voltage (VDS) and a continuous drain current of up to 60A at 25°C case temperature. The on-resistance (RDS(on)) is as low as 1.4mOhm at a gate-source voltage (VGS) of 10V, and 2.4mOhm at 4.5V. The typical gate charge (Qg) is 17.2nC.
This MOSFET operates within a junction and storage temperature range of -55°C to +150°C. It is packaged in a PowerPAK SO-8 configuration, suitable for surface mounting.
Applications include synchronous rectification, high power density DC/DC converters, synchronous buck converters, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V maximum.
60A at Tc=25°C, 44.5A at Ta=25°C.
1.4 mOhm maximum at 15A, 10V gate drive; 2.4 mOhm at 15A, 4.5V.
-55°C to +150°C.
PowerPAK SO-8 surface-mount package.
26 nC maximum at 4.5V gate-source voltage.
2650 pF maximum at 10V drain-source voltage.