| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIRA20DP-T1-RE3 is a TrenchFET Gen IV power MOSFET with an N-Channel configuration. It is designed for applications requiring efficient power switching, such as synchronous rectification, high power density DC/DC converters, and load switching.
Key electrical specifications include a drain-source voltage of 25V. The on-resistance (Rds On) is as low as 0.58mOhm at 20A and 10V Vgs, optimizing switching efficiency and reducing power loss. The typical gate charge (Qg) is 61nC, and the input capacitance (Ciss) is 10850pF at 10V.
This MOSFET operates over a wide temperature range of -55°C to 150°C. It is housed in a PowerPAK SO-8 package, suitable for surface mounting. The continuous drain current is rated at 100A (Tc) and 81.7A (Ta), with a pulsed drain current capability of up to 500A.
The SIRA20DP-T1-RE3 is optimized for reduced switching-related power loss due to its TrenchFET Gen IV technology. It is 100% Rg and UIS tested, ensuring reliability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 25V.
The gate-source voltage is +16V maximum and -12V minimum.
100A at case temperature 25°C, and 81.7A at ambient temperature 25°C.
0.58mOhm maximum at Vgs=10V and Id=20A, and 0.82mOhm maximum at Vgs=4.5V.
Surface-mount PowerPAK SO-8.
-55°C to 150°C junction temperature.
Typical gate charge is 61nC, maximum 200nC at Vgs=10V.